AlInN for light emitting and semiconductor devices
|Organization:||EPFL (Swiss Federal Institute of Technology - Lausanne), CH-1015, CH|
|I.P. Brief:||This technology propose methods to manufacture III-Nitride devices for optoelectronic and electronic devices.
It is also concerned with optoelectronic devices which, more particularly, include a Bragg reflector element.
Finally it proposes the use of polarization-doped layer(s) in the design of III-nitride light emitting devices (Light emitting diodes, Laser Diodes).|
|Summary of I.P.:||This invention proposes first a procedure that allows selective oxidation and selective etching in III-nitride devices.
AlInN materials hold great potential for GaN-based optoelectronics and this invention contributes to this potential.
As yet, AlInN has found little use in optoelectronic devices mainly because growth is difficult due to phase separation. A reflector structure or in-plane waveguide is formed on a substrate, for electromagnetic radiation at a wavelength in a range from 380 nm to 1600 nm.
The structure includes alternating layers of GaN and AlInN.
There is a great interest in III-nitride semiconductors: main applications are Blue and UV light emitting diodes (LEDs),
laser diodes (LDs). But doping these alloys by the classical adjunction of foreign atoms, especially for p-type doping, is still an issue.
On the other hand, III-Nitrides semiconductors are highly polar materials, which allows for a new way for doping: “polarization doping”. The principle of polarization doping relies on the presence of a polarization field (spontaneous and piezoelectric) oriented along C-axis in III-Nitrides semiconductor crystals.|
|Patent:||US11/034,692 dated 13Jan05 - US 10/900,514 dated 28Jul04 - US60/639026 dated 24dec04|
|Keywords:||LEDs, Lasers, VCSELs|
|Specific Market:||light emitting devices|
|Market Size:||$5B in 2004 to $7B in 2008|
|State of the Art:||Other materials such as AsGa, InP and others (III-V semiconductors) are the state of the art.|
|Competition:||The market is attracting huge industry players so the main threat is the power of the players.|
|Figures of Merit:||- New doping technique
- Avoids the difficulty of Mg doping
- Improves UV LEDs|
|Tech. Obstacles:||needs to scale from lab to industry|
|Market Obstacles:||- needs to scale from lab to industry
- emerging competition in a booming market|
|Patent Landscape:||Patents in light emitting devices are numerous
but AlInN is very new.|
|Publications:||E. Feltin, J.-F. Carlin, J. Dorsaz, G. Christmann,
R. Butté, M. Laügt, M. Ilegems, and N. Grandjean
Crack-free highly reflective AlInN/AlGaN
Bragg mirrors for UV applications
Appl. Phys. Lett. 88, 051108 (2006)
J. Dorsaz, H.-J. Bühlmann, J.-F. Carlin,
N. Grandjean, and M. Ilegems
Selective oxidation of AlInN layers
for current confinement in III–nitride devices
Appl. Phys. Lett. 87, 072102 (2005)
E. Feltin, R. Butté, J.-F. Carlin, J. Dorsaz,
N. Grandjean, and M. Ilegems
Lattice-matched distributed Bragg reflectors
for nitride-based vertical cavity surface emitting
Electron. Lett. 41, 94 (2005)
J.F. Carlin and M.Ilegems:
\"High-quality AlInN for high index contrast
Bragg mirrors lattice matched to GaN\",
Appl. Phys. Lett. 83 (4): pp. 668-670 (2003).
M. Rattier, T. F. Krauss, J. F. Carlin,
R. P. Stanley, U. Oesterle, R. Houdré,
C. J. M. Smith, R. M. De La Rue, H. Benisty,
and C. Weisbuch,
“High extraction efficiency, laterally injected,
light emitting diodes combining microcavities
and photonic crystals”,
Opt. Quantum Electron., vol. 34, pp. 79-89, 2002.|
|Research Team:||Inside the optics Institute of EPFL, the researchers
working on AlInN are a small team of 5-7 people.
This makes more than 20 years of experience.|