|Title:||FlexVia integrated circuits|
|Executive Summary:||The scaling of ICs is seriously compromised by the difficulties of the interface between metallic interconnects and semiconducting elements. With smaller devices, interconnect areas become small and interface resistances increase dramatically. This requires high local doping, with the risk that the dopants diffuse all over the active devices. A second problem facing the semiconductor industry is that fast non-volatile memory elements don’t exist. A third problem is the completely different and often incompatible materials needed, semiconductors for logics and metals for interconnects, requiring intricate barrier layers and a very large number of mask steps. A fourth problem is that all active elements are in the bottom semiconductor layer, resulting in long and slow interconnect paths.
FlexVia aims to solve these problems the semiconductor industry is facing by replacing the common vertical tungsten Via in an integrated circuit by a nano-electromechanically movable tungsten Via (The FlexVia). This movable via can form both a logic switching element and a memory element. This way logic and memory elements are distributed in 3D over an IC, decreasing interconnect path length, increasing IC speed, and eliminating the complex and costly manufacturing issues of semiconductor ICs by creating an all-metal IC.
|Venture is:||Seed Level|