N. Gupta, A. Kumar, R. Chaujar
Delhi Technological University, India
pp. 181 - 184
Keywords: gate engineering, silicon nanowire, power gains and RF
In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOSFET over SiNW MOSFET and Conventional MOSFET in terms of power gains. Further, using three-dimensional (3-D) device simulations, we have examined the efficacy of gate length on RF figure of merit of GEWE-SiNW MOSFET. Moreover, simulation reveals significant enhancement in maximum available power gain (Gma) and maximum transducer power gain (GMT) have also been observed for GEWE-SiNW MOSFET due to alleviated short channel effects (SCEs) and improved drain current.Hence suitable for RF/wireless applications.