J. Madan, R.S. Gupta, R. Chaujar
Delhi Technological University, India
pp. 189 - 192
Keywords: band to band tunneling, barrier width, dual material gate, hetero gate dielectric, tunnel field effect transistor
In this paper the small signal parameters of n-type heterogeneous gate dielectric gate all around tunnel FET (n-type-HD-GAA-TFET) and n-GAA-TFET are analyzed in terms of parasitic capacitance and RF figure of merits (FOM)such as cut off frequency and maximum oscillation frequency. The device performance is studied for various dielectric constants combinations. With the implementation of Hetero gate dielectric reduction of parasitic capacitance and enhancement in maximum oscillation frequency has been obtained. Due to reduced parasitic capacitance the active power dissipation of the device is reduced and simultaneously the response time will increase. Due to enhanced cut off frequency and maximum oscillation frequency the device can work at high frequency also.