Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015Advanced Manufacturing, Electronics and Microsystems TechConnect Briefs 2015

Modeling & Simulation of Microsystems Chapter 7

The Heat transfer in Fin-FET transistor

M. Zubert, M. Janicki, T. Raszkowski, A. Samson, A. Napieralski
Lodz University of Technology, Poland

pp. 250 - 253

Keywords: FinFET, Fourier-Kirchhoff, BDE, BTE, ballistic heat transport, diffusion heat transport

The electro-thermal analysis is one of the most important development steps in the professional design of analogue submicron electric ICs, power modules design process as well as modern nanostructures. This analysis is useful to power density and operating conditions estimation. Mostly heat transfer in a thermally conducting solid medium can be correctly described using the classical Fourier law and the resulting Fourier-Kirchhoff heat equation Unfortunately, the Fourier-Kirchhoff equation postulates some nonphysical behaviour assuming that •heat propagates with infinite speed and •both heat flux and temperature gradient are changing instantaneously, what does not agree with experiments. Another problem is associated with the semiconductor fabrication technology whose development brought extreme device size down to 14nm(Intel Broadwell_CPU) or 6nm(FinFETs,nanowire,nanotube). In all these cases the structure characteristic length is much more higher than the mean phonon free path (41.8nm@300K). Therefore, the ballistic heat transport should be taken into consideration. The carefully electro-thermal model of FinFET has been already presented by prof. A.Asenova group. In this paper the classical Fourier-Kirchhoff equation with special correction for nano-scale has been applied. The our work will take into consideration the ballistic and diffusion heat transport in FinFET based on the heat-transfer model proposed by G.Chen.