A. Nomoto, Y. Satoh, K. Horio
Shibaura Institute of Technology, Japan
pp. 270 - 273
Keywords: GaAs FET, surface state, current slump, field plate
Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of drain lag, gate lag and current slump on the field-plate length and SiO2 passivation layer thickness is studied, indicating that the lags and current slump can be completely removed in a case with a thin SiO2 layer.