G. Schrag, T. Künzig, M. Niessner, G. Wachutka
Technical University of Munich, Germany
pp. 95 - 99
Keywords: RF-MEMS switch, FEA, Simulation
We present two problem-adapted, tailored modeling approaches for RF-MEMS switches which, in principle, are applicable to any capacitive MEMS device. They are based on finite element analysis (FEA) combined with analytical, lumped-element, and reduced-order modeling techniques. The first model has been tailored for detailed investigations on device level (problem-adapted FE model), while the second approach is suited for system-level analysis based on macromodels generated from a discretized FE model of the device. Both approaches enable the efficient, but yet physics-based simulation of the device characteristics, which is demonstrated by comparing the simulation results of two different designs of an RF-MEMS switch with optically measured data of its static and dynamic operation. See full PDF submission.