A.V. Jawake, S.R. Aher, H.S. Borse, K.S. Bhosale, S.R. Patil, G.C. Patil
JSPM’s Rajarshi Shahu College of Engineering, India
pp. 214 - 217
Keywords: GaAs, analog figures of merit, short channel effects
Over the last few decades silicon has proven its superiority in the semiconductor world with respect to properties like small mass, good carrier capability, low cost, maximum wafer diameter etc. However, since on-state drive current of MOSFET depends upon the channel mobility, more attention has to be given on high electron mobility channel materials such as GaAs, InGaAs, InP etc. Further, to combine the properties of Si with GaAs attributes namely higher electron mobility and switching speed, we tried to combine the properties of Si and GaAs materials in a novel device named as GaAs-on-Si MOSFET. Further, the comparative analysis of GaAs-on-Si, Si and GaAs MOSFETs has been carried out. It has been found that, despite having higher leakage in the proposed GaAs-on-Si MOSFET, ION in the case of proposed device is improved by ~40% and ~5% respectively over the Si and GaAs MOSFETs. Although the larger off-state leakage, sub-threshold slope and drain induced barrier lowering increases the short channel effects, the improved ION and lower gate capacitance shows the superiority of the proposed device for high frequency analog applications. In addition to this, the detailed process flow to fabricate GaAs-on-Si MOSFET has been proposed.