Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015Advanced Manufacturing, Electronics and Microsystems TechConnect Briefs 2015

Nanoelectronics, Materials & Devices Chapter 6

Impact of Gate Oxide Thickness and Channel Thickness on DC Performance of Carbon Nanotube Tunnel FET

K.S. Bhosale, A.V. Jawake, S.R. Aher, H.S. Borse, S.R. Patil, G.C. Patil
JSPM’s Rajarshi Shahu College of Engineering, India

pp. 206 - 209

Keywords: carbon nanotube, tunnel FET, gate oxide thickness, channel thickness, DC performance

The scaling down of conventional complementary metal–oxide–semiconductor technology is suffering from fundamental limitations. To overcome these problems, novel engineering solutions like improving the device architecture,introducing materials into the channel region with superior transport properties, and new gate dielectrics have been suggested. Tunnel FET is one such prominent device which has surpassed CMOS at low voltages mainly because of its current mechanism viz Band-to-Band-Tunneling, where the charge carriers transfer from one energy band into another. Carbon nanotubes have demonstrated largest ON-state currents in terms of scaling for enhanced device performance. In this work a double gate p-i-n CNT TFET has been simulated and a coupled mode space approach has been used to solve Schrodinger equations with open boundary by means of the Non-Equilibrium Green’s Function formalism. Effect of change in gate oxide thickness, channel length, diameter and energy gap of the nanotube on the ON-state and OFF-state current have been studied. We observed that with increase in gate length, there is decrease in ION,IOFF and static power dissipation for different oxide thickness. Also the ION and IOFF values decrease with increase in the diameter of the nanotube. Further, for nanotubes with larger energy gaps,lower values of ION and IOFF are observed.