Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2015Advanced Manufacturing, Electronics and Microsystems TechConnect Briefs 2015

Nanoelectronics, Materials & Devices Chapter 6

Analysis of Small Signal Behaviour of Transparent Gate Recessed Channel (TGRC) MOSFET for High Frequency/RF Applications

A. Kumar, N. Gupta, R. Chaujar
Delhi Technological University, India

pp. 193 - 195

Keywords: ATLAS, CRC-MOSFET, intrinsic delay, power gain, RF, TGRC-MOSFET

In this paper, small signal behavior have been investigated for Transparent Gate Recessed Channel (TGRC) MOSFET in terms of Y-parameters and Z-parameters, the results are compared with Conventional Recessed Channel (CRC) MOSFET at THz frequency range, using ATLAS device simulator. Small-signal Y-parameters and Z-parameters are commonly employed for those networks which are operating at RF and microwave frequencies, where admittances are more easily computed in compared to voltages and currents. Since, at high frequency it is very difficult to estimate current and voltages. Z11 is higher (higher Y22) and Z22 is lower (lower Y11) in TGRC-MOSFET as compared to CRC-MOSFET i.e. input impedance is high and output impedance is less which is necessary for RF application of MOSFETs. Z12 and Z21 (open circuit transfer impedance) parameters are also high in TGRC-MOSFET. Similarly Y12 and Y21 (short circuit transfer admittance) are enhanced in TGRC-MOSFET which leads to high input impedance. All simulations have been performed using ATLAS and DEVEDIT 3D device simulator.