D. Zavitz, J. Kubricky
CSI2D, United States
pp. 178 - 180
Keywords: silicene, arsenene, 2D, semiconductors
Chicago Semiconductor achieved a breakthrough in fabricating two-dimensional layers of Arsenene and Silicene. This was realized for uniform deposition of Arsenic-on-Silicon(112) and Silicene on Silicon (112). The key to stable and uniform Arsenene-on-Silicon (AeOS) and Silicene-on-Silicon (SeOS) layers was discovered and optimized by exploiting unique vacuum techniques, temperatures and annealing processes similar to Silicon/CdTe thin film processes. The existence of a high-quality AeOS substrate was confirmed with calculations, metrology and laboratory research.