Advanced Manufacturing, Electronics and Microsystems: TechConnect Briefs 2016Advanced Manufacturing, Electronics and Microsystems TechConnect Briefs 2016

Informatics, Modeling, and Simulation Chapter 2

A New Method to Fin-width Line Edge Roughness Effect Simulation of FinFET Performance

Y. Zhu, W. Zhao, W. Wang, W. Wu, Z. Feng, J. He, P. He, L. Song
Peking University Shenzhen SOC Key Laboratory, China

pp. 67 - 71

Keywords: fin-width, LER, intrinsic parameter fluctuation, FinFET, 3-D numerical simulation

This paper developed a full three-dimensional (3-D) statistical simulation method to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic parameter fluctuations at fixed LER parameters are studied in carefully designed simulation experiments. The result shows that Fin-width LER causes a dramatic shift and fluctuations in threshold voltage. The simulation results also imply that the velocity saturation effect may come into effect even under low drain voltage due to LER effect.