Auburn University, United States
pp. 275 - 281
Keywords: shot noise, correlated noise, NQS effect, bipolar transistor, compact modeling
A physics based approach to compact modeling of bipolar transistor noise is described. Frequency dependent intrinsic base current noise, its correlation to intrinsic collector current noise, avalanche of intrinsic collector current noise entering the collector-base junction space charge region as well as the inherent noise of the avalanche process are modeled in a modular way to facilitate turning on and off individual noise physics. Two dedicated noise parameters, a noise time describing the increase of intrinsic base current noise at high frequency, and correlation coefficient are used.