W-L. Sung and Y. Li
National Chiao Tung University, Taiwan
pp. 43 - 46
Keywords: characteristic fluctuation, gate-all-around, silicon, nanowire, MOSFETs, random discrete dopants, source/drain extensions
In this study, we explore characteristic fluctuation of gate-all-around silicon nanowire MOSFETs induced by random discrete dopants (RDDs) resulting from source/drain extensions. Compared with the results of source extension, asymmetric variations of characteristics induced by RDDs in the drain extension are suppressed owing to the different extent of screening effect on the surface of channel; in particular, the fluctuations of voltage gain and cut-off frequency are reduced from 24% and 21% to 7% and 10%, respectively, because of the effective fluctuation reduction of maximum transconductance near the drain extension.